vishay BAR64V-06 document number 85696 rev. 1.2, 26-apr-04 vishay semiconductors www.vishay.com 1 17033 12 3 1 2 3 rf pin diodes - dual, common anode in sot-23 description characterized by low reverse capacitance the pin diodes BAR64V-06 was designed for rf signal switching and tuning. as a function of the forward bias current the forward resistance (rf) can be adjusted over a wide range. a long carrier life time offers low signal distortion for signals over 10 mhz up to 3 ghz. typical applications for this pin diodes are switches and attenuators in wireless, mobile and tv- systems. features ? high reverse voltage small reverse capacitance high breakdown voltage applications for frequency up to 3 ghz rf-signal tuning signal attenuator and switches mobile , wireless and tv-applications mechanical data case: plastic case (sot-23) weight: approx. 8.1 mg packaging codes/options: gs18 / 10 k per 13" reel (8 mm tape), 10 k/box gs08 / 3 k per 7" reel (8 mm tape), 15 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified electrical characteristics t amb = 25 c, unless otherwise specified part ordering code marking remarks BAR64V-06 BAR64V-06-gs18 or BAR64V-06-gs08 d6 tape and reel parameter test condition symbol value unit reverse voltage v r 100 v forward current i f 100 ma junction temperature t j 150 c storage temperature range t stg - 55 to + 150 c parameter test condition symbol min ty p. max unit reverse voltage i r = 10 av r 100 v reverse current v r = 50 v i r 50 na forward voltage i f = 50 ma v f 1.1 v
www.vishay.com 2 document number 85696 rev. 1.2, 26-apr-04 vishay BAR64V-06 vishay semiconductors typical characteristics (t amb = 25 c unless otherwise specified) diode capacitance f = 1 mhz, v r = 0 c d 0.5 pf f = 1 mhz, v r = 1 v c d 0.37 0.5 pf f = 1 mhz, v r = 20 v c d 0.23 0.35 pf forward resistance f = 100 mhz, i f = 1 ma r f 10 20 ? f = 100 mhz, i f = 10 ma r f 2.0 3.8 ? f = 100 mhz, i f = 100 ma r f 0.8 1.35 ? charge carrier life time i f = 10 ma, i r = 6 ma, i r = 3 ma t rr 1.8 s parameter test condition symbol min ty p. max unit fig. 1 forward resistance vs. forward current fig. 2 diode capacitance vs. reverse voltage 0.1 1.0 10.0 100.0 0.1 1.0 10 100 18342 i f - forward current ( ma ) r - forward resistance ( ) f f = 100 mhz ? 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0 4 8 12 16 20 24 28 18334 v r - reverse v oltage (v) c - diode capacitance ( pf ) d f=1mhz fig. 3 forward current vs. forward voltage fig. 4 reverse voltage vs. reverse current 0.01 0.10 1.00 10.00 100.00 0.5 0.6 0.7 0.8 0.9 1.0 i - forward current ( ma ) v f - forward voltag e(v) 18326 f 0 50 100 150 200 250 300 0.01 0.1 1.0 10 100 1000 v - reverse v oltag e(v) i r - reverse current ( a) 18330 r
vishay BAR64V-06 document number 85696 rev. 1.2, 26-apr-04 vishay semiconductors www.vishay.com 3 package dimensions in mm (inches) fig. 5 typical charge recovery curve -8 -6 -4 -2 0 2 4 6 8 10 12 -500 500 1500 2500 3500 18338 recovery time ( ns ) i - forward current ( ma ) f i f =10ma i r =6ma i rr =3ma 2.0 (0.079) 0.9 (0.035) 0.95 (0.037) 0.95 (0.037) 0.8 (0.031) 1 2 3 17418 2.8 (.110) 3.1 (.122) 0.4 (.016) 0.95 (.037) 0.95 (.037) max 0.1 (.004) 1.33 (.052) 1.43 (.056) 0.4 (.016) 0.4 (.016) 0.125 (.005) 0.175 (.007) 0.95 (.037) 1.15 (.045) iso method a 2.4 (.094) 2.6 (.102) mounting pad layout
www.vishay.com 4 document number 85696 rev. 1.2, 26-apr-04 vishay BAR64V-06 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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